摘要
用常压ＭＯＣＶＤ方法我们在蓝宝石（０００１）、Ｓｉ（１１１）衬底上，成功地制备出ＧａＮ单晶薄膜材料，取得了ＧａＮ材料的初步测试结果。纯度ＧａＮ为ｎ型，载流子浓度为１０１７～１０１８ｃｍ－３，迁移率为２００～３５０ｃｍ２／Ｖ·ｓ，双晶衍射半峰宽为７′，室温ＰＬ光谱本征发光波长为３７０ｎｍ，并首次观察到掺ＺｎＧａＮ呈ｐ型电导。
The single crystal GaN films were prepared by APMOCVD on sappier(0001)and Si(111)substrates.They exhibited n type intrinsic conduction,their concentration,Hall mobility and FWHM of double crystal diffraction were 10 17 ～10 18 cm 3,200～350cm 2/V·s and 7′.respectively.The RT PL spectra result of pure GaN showed that there was a band edge peak at 370nm,It is the first time that we have observed the p type conduct of Zn doped GaN material.
出处
《半导体情报》
1997年第5期6-9,共4页
Semiconductor Information
