期刊文献+

CMP专用硅溶胶研磨料粒径可控增长技术的研究 被引量:3

Study of Particle-size-controllable Growth of Silica Sol Abrasive for CMP
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摘要 以LaMer模型为理论依据,对恒液面聚合生长法制备硅溶胶的母液制备和粒径增长阶段进行了工艺研究。通过适当加料速率下的母液制备可产生适当数量的晶核,并制得一系列小粒径规格的低分散度硅溶胶。在粒径增长阶段,通过选择与底料中粒径状况相匹配的加料速率,使胶粒均匀长大而制得一系列中等粒径和大粒径规格的硅溶胶。该技术实现了硅溶胶粒径的可控增长。 LaMer model provided theoretical guide to preparation of silica sol through polymerization growth technique with control of constant liquid level. About the preparation of heel with an optimized feed rate, the appropriate nuclei quantity can be got, and these nuclei can be used for preparation of a series of small particle size and lower polydispersition silica sol. In particle growth stage, the optimized feed rate matches on particle status of bed charge, so the particles can grow up in a uniform rate, and the got silica sols have a series of medium and large particle size with lower polydispersition. The technology realizes particle-size-controllable growth of silica sol.
出处 《纳米科技》 2007年第6期40-44,共5页
基金 天津市自然科学基金科技发展计划项目(043801211)
关键词 超大规模集成电路 化学机械抛光 硅溶胶 粒径 可控增长 uhralarge-scale integrated circuit (ULS1) chemical mechanical polishing (CMP) silica sol particle size con- trollable growth
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  • 1张楷亮,宋志棠,张建新,檀柏梅,刘玉岭.ULSI介质CMP用大粒径硅溶胶纳米研磨料的合成及应用研究[J].电子器件,2004,27(4):556-558. 被引量:8
  • 2王娟,刘玉岭,张建新.新型CMP用二氧化硅研磨料[J].半导体技术,2005,30(8):25-26. 被引量:3
  • 3刘博,刘玉岭,孙鸣,贾英茜,刘长宇.ULSI多层铜布线CMP影响因素分析研究[J].微纳电子技术,2006,43(9):442-446. 被引量:8
  • 4LIU R H, JIN Z J, GUO D M, et al. Experimental study on influences of dispersant on dispersion and stability of CMP slurry with silica [ C ]//ICSFT. Dalian, China, 2006 : 341-346.
  • 5CHEN K W,WANG Y L,LIU C P,et al. Novel slurry solution for dishing elimination in copper process beyond 0.1 μm technology [ J]. Thin Solid Films, 2006,498 (1/2) :50-55.
  • 6CHEN K W, WANG Y L, LIU C P, et al. Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect [J]. Thin Solid Films, 2004, 447-448 : 531-536.
  • 7CHIU S Y, WANG Y L, LIU C P, et al. High-selectivity damascene chemical mechanical polishing [J]. Thin Solid Films, 2006,498 ( 1/2) : 60-63.
  • 8刘玉岭,檀柏梅,张楷亮.微电子技术工程一材料、工艺与测试[M].北京:电子工业出版社,2004:437-497.
  • 9CHIU S Y, WANG Y L, LIU CP, et al. High-selectivity damascene chemical mechanical pohshing [ J]. Thin Solid Films,2006,498( 1 - 2) :60 - 63.
  • 10Liu R H, Jin Z J, Guo DM, et al. Experimental study on influences of dispersant on dispersion and stability of CMP slurry with silica [ C]. ICSFT, Dalian, China, 2006:341 - 346.

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