摘要
用氧脉冲直流反应磁控溅射法，在载玻片衬底上制备了不同初始氧浓度和不同断氧时间％的多晶TiO2纳米薄膜，并对薄膜的厚度、晶体结构及表面形貌进行了研究。研究发现，脉冲式通氧能有效消除靶中毒，将薄膜沉积速率最大提高到3～5nm／min，并且当断氧时间大于30s时，沉积速率在2．5nm／min以上；薄膜的晶体结构和形貌随着氧浓度和断氧时间而变化，在初始氧浓度为30％、断氧时间为30s时，金红石结构样品具有最佳结晶程度，并且薄膜的表面平整、晶粒尺寸分布均匀，而锐钛矿结构的最佳结晶条件是氧浓度30％或50％、断氧时间20s.
Polycrystalline TiO2 thin films were deposited on slide glass at different oxygen concentration and time of oxygen-off （Toff） by oxygen pulse DC reactive magnetron sputtering in this paper. And the thickness of films, crystal structure and surface morphology were investigated. It was found that oxygen introduced like pulse can increase the deposition rate up to the maximum value of 3-Snm/min, and the rate was more than 2.Snm/min with the Toff large than 30s. In addition, the influence of oxygen concentration and Toff on crystal structure and surface morphology was studied. The best crystallization condition of ruffle is at oxygen concentration of 30% and Toff of 30s, and this film also has smooth surface and uniform grain size. However, the best crystallization condition of anatase ia at oxygen concentration of 30% or 50%, and Toff of 20s.
基金
绍兴市科技局项目（No.2003141
No.2004147）
关键词
TIO2
薄膜
靶中毒
晶体结构
表面形貌
TiO2 thin films
target poisoning
crystal structure
surface morphology
