摘要
对功率型倒装结构发光二极管(LED)温度场分布进行了有限元模拟,与实测结果进行了比较,并结合传热学基本原理对模拟结果进行了分析。结果表明,凸点的形状及分布与芯片内部温差有着密切的关系,蓝宝石的厚度对芯片内部温差也有一定的影响。同时,对倒装结构与正装结构的热阻进行了比较。
The thermal property of high power flip-chip light-emitting diode （LED） was simulated and analyzed. The results show that the difference in temperature of the LED die are closely related with the shape and the distribution of solder bumps. The thickness of sapphire also affects the thermal property of light-emitting diode die. The comparison is given between flip-chip and conventional structure.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2007年第6期769-773,共5页
Semiconductor Optoelectronics
关键词
GAN
LED
热模拟
有限元
倒装结构
GaN
light-emitting diode（LED）
thermal simulation
finite element analysis
flip-chip
