非平面化型ITO氮化镓基蓝光发光二极管

GaN-based Blue Light-emitting Diodes with a Nano-roughened ITO Surface

将氧化铟锡(ITO)生长于氮化镓基蓝色发光二极管的出光台面上(p型GaN台面),用非平面化处理的方法制作出ITO井状结构,研制出非平面化型氧化铟锡-氮化镓基蓝色发光二极管(LED),获得了高的出光效率。结果表明,在20 mA工作电流下,该蓝色发光二极管的出光光强是平整的普通ITO-GaN基LED的1.35倍。

Indium-tin-oxide （ITO） material was grown on the plane of a new type GaNbased light emitting diodes （LEDs）. A pillar or well structure arranged periodically in the plane were successfully fabricated, which obtained high light-extracted efficiency. It is found that the output power of the new type LEDs under 20 mA current is 1.35 times higher than the normal ITO-GaN-based LED.