摘要
推导出半导体激光器前腔面和后腔面上的入射激光功率之比,阐述了后腔面膜电场强度优化设计的重要性。从实际问题出发在以往腔面膜的研制基础上,选择适合制备808 nm大功率半导体激光器腔面的镀膜材料。给出了镀制腔面膜过程中会出现的种种关键问题的解决方法,针对各种具体应用提出几种前腔面设计方案。得到后腔面电场强度优化设计的膜系。
The incident power ratio of front and back cavity facet coatings was deduced, and the importance in optimized designing of electric field intensity（EFI） distribution of back cavity facet coatings for 808 nm high power semiconductor laser was explained. Based on the experimental fabrication of cavity facet coatings, optimized coatings of back cavity facet are given through choosing proper starting materials. Several methods of solving key problems in the fabrication of cavity facet coating are discussed, and several designing methods of front cavity surface coating are provided, thus back cavity facet coatings of which electric field intensity being optimizedly designed are obtained.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2007年第6期778-780,784,共4页
Semiconductor Optoelectronics
基金
吉林省科技厅重点资助项目
中科院创新重大项目
关键词
大功率半导体激光器
电场强度优化设计
腔面膜
high power semiconductor laser
optimized electric field intensity designing
cavity facet coatings
