期刊文献+

PZT铁电材料的总剂量辐照效应实验研究 被引量:6

Total dose radiation effect on PZT ferroelectric material
下载PDF
导出
摘要 采用传统固相反应法制备PZT铁电材料,并制作成平行平板无源电容器结构,在ELV-8电子直线加速器上进行了总剂量效应辐照实验。结果表明:样片经过不同强度高能高速直流电子束辐照后的电滞回线随着辐照强度的增加,电滞回线所包围的面积逐渐减小,饱和极化强度、剩余极化强度和矫顽场呈线性减小。其中当辐照剂量为1×108rad(Si)时,饱和极化强度、剩余极化强度和矫顽场的衰减幅度分别为14.1%,15.0%和2.7%,样片抗总剂量辐照能力可达1×108rad(Si)。 Lead zirconate titanate(PZT) ferroelectric materials were prepared by the traditional solid phase reaction method, and the passive capacitors of parallel slab were processed. At last the total dose radiation effect on the PZT ferroelectric material capacitors with the ELV-8 electron linear accelerator were tested. The ferroelectric performance parameters of capacitors before and after radiation were tested and compared. The results show that the encircling area of polarization-field hysteresis loop is grad- ually decreased, and that the parameters such as the saturation polarization, the remnant polarization and the coercive field exhibit a linear decrease with the increase of irradiation dose of high energy electron. When the irradiation dose is 1 × 10^8 rad(Si), the attenuation ranges of those parameters are respectively 14.1%, 15.0 % and 2.7 %. It is obvious that the antl-total dose radiation capability of the sample plates can reach 1 × 10^8 tad (Si).
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2007年第12期2091-2094,共4页 High Power Laser and Particle Beams
关键词 铁电材料 电滞回线 总剂量辐照效应 抗辐照 Ferroelectric material Ferroelectric hysteresis loop Total dose radiation effects Radiation resist
  • 相关文献

参考文献8

  • 1田莳.铁电材料研究进展及其在飞行器上的应用[J].航空学报,2000,21(C00):6-10. 被引量:5
  • 2Schwak J R, Nasby R D, Miller S L. Total dose radiation-induced degradation of thin film ferroelectric capacitors [J]. IEEE Trans Nucl Sci, 1991, 37 (6):1703-1707.
  • 3Colc Y M, Musseau O, Leray J L. A study of radiation vulnerability of ferroelectric material and devices [J]. IEEE Trans Nucl Sci, 1994, 41(3):495-499.
  • 4高剑侠,郑立荣,王连卫,林成鲁,朱德彰.Pt/PZT/Pt电容的γ射线辐照积累剂量效应[J].功能材料与器件学报,1998,4(4):286-290. 被引量:2
  • 5Scott J F, Araujo C A, Brett H. Radiation effects on ferroelectric thin-film memories: retention failure mechanisms [J]. J Appl Phys, 1989, 66(3) :1444-1449.
  • 6唐重林,柴常春,娄利飞,楼晓强.铁电材料的核辐射效应[J].材料导报,2007,21(8):33-36. 被引量:7
  • 7Benedetto J M, Moore R A, Mclean F B. The effect of ionizing degradation of sol-gel ferroelectric capacitors [J]. IEEE Trans Nucl Sci, 1990, 37(6) :1713.
  • 8Lee J, Fsayan S, Safari A. Effect of ultraviolet light on fatigue of lead zirconate titanate thin-film capacitors [J]. Appl Phys Lett, 1994, 65(2):254.

二级参考文献26

  • 1钟维烈.铁电物理学[M].北京:科学出版社,1996.2-8.
  • 2Philpy S C,Kamp D A,DeVilbiss A D,et al.Adaptable ferroelectric memories for space applications.Non-Volatile Memory Technology Symposium,2004,15:149
  • 3Kamp D A,DeVilbiss A D,Haag G R,et al.High density radiation hardened FeRAMs on a 130 nm CMOS/FRAM process.Non-Volatile Memory Technology Symposium,2005,16:4
  • 4Wang Zheyao,Liu Jianshe,Ren Tianling,et al.Ba0.5 Sr0.5TiO3 ferroelectric thick films with uniform thickness and its applications to RF MEMS devices.Applications of Ferroelectrics ISAF IEEE,2002,28:475
  • 5Philpy S T,Kamp D A,Derbenwick G F.Nonvolatile and SDRAM ferroelectric memories for aerospace applications.Aerospace Conference Proceedings IEEE,2004.2294
  • 6Goo R.Ferroelectric single crystal materials in optoelectronics and microwave photonic applications.Microwave Photonics MWP 04 IEEE International Topical Meeting,2004.4
  • 7Liang Dong,Yue Ruifeng,Liu Litian.Monolithic dielectric BST infrared sensor arrays using a novel silicon-ferroelectric integration scheme based on improved porous silicon micromachining.Micro Electro Mechanical Systems,2004,17:576
  • 8Koontz S L,Boeder P A,Pankop C,et al.The ionizing radiation environment on the international space station:performance vs.expectations for avionics and materials.Radiation Effects Data Workshop IEEE,2005,11:110
  • 9Kinnison J D.IEEE nuclear and spaceradiation effects conference (NSREC) awards comments by the chairman.IEEE Trans Nucl Sci,2005,52(6):2095
  • 10Messenger S R,Burke E A,Summers G P,et al.Criteria for identifying radiation resistant semiconductor materials.IEEE Trans Nucl Sci,2005,52(6):2276

共引文献10

同被引文献81

  • 1王立,邢焰.航天器材料的空间应用及其保障技术[J].航天器环境工程,2010,27(1):35-40. 被引量:10
  • 2辜科,李平,李威.铁电存储器的单粒子效应试验研究[J].微电子学与计算机,2015,32(6):109-111. 被引量:3
  • 3郭常厚,赵晓辉.场区加固工艺技术研究[J].半导体技术,2007,32(6):505-507. 被引量:2
  • 4SCOTT J F.铁电存储器[M].朱劲松,吕笑梅,译.北京:清华大学出版社,2004.
  • 5ClaeysC,SimoenE.先进半导体材料及器件的辐射效应[M].北京:国防工业出版社,2008.
  • 6唐重林,柴常春,娄利飞,楼晓强.铁电材料的核辐射效应[J].材料导报,2007,21(8):33-36. 被引量:7
  • 7Mickael L. Ferroelectrics-Applications[M]. Croatia: InTech,2011.
  • 8Strauss K F, Daud T. Overview of radiation tolerant unli-mited write cycle non-volatile memory[C]//IEEE AerospaceConference Proceedings. Pasadena,2000; 399.
  • 9Scott J F. Applications of modern ferroelectrics[J]. Scien-ce,2007,315:954.
  • 10Sheikholeslami A,Gulak P G. A survey of circuit innova-tions in ferroelectric random-access memories [ C] //Procee-dings of IEEE. Canada, 2000 : 667.

引证文献6

二级引证文献15

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部