一种可用于Footing效应模拟的ICP刻蚀模型

ICP etching model available for Footing effect simulation

电感耦合等离子体(ICP)刻蚀在目前的硅微机械加工中应用十分广泛。在这一加工过程中,存在着影响结构拓扑特性、被加工结构性能的一些效应,SOI结构中的Footing效应就是其中之一。本文在利用一种改进的复合交替深刻蚀(TMDE)模型对ICP刻蚀表面进行建模及数值模拟的基础上,根据Footing效应的实验表现特征,设定类高斯分布的表面描述方程。同时借助实验数据确定了表面描述方程中的参数,添加了一种简单有效的Footing效应模拟模块。最后对Footing效应刻蚀表面进行模拟,并得到与实验较为一致的表面模拟结果。

Inductively coupled plasma etching is very popularly used in modern silicon micro-mechanical manufacture. Some effects exist in this fabrication, such as Footing effect in SOl, which will influence the structures on topology and characteristic. Based on a reported time multiplexed deep etching model for ICP etching simulation and the experimental performance of Footing, the surface description equation is assumed, the parameter of this equation is determined by experimental fitting method, and then a simple and effective module of Footing is developed and added to the former model. Simulated results keep accordance with the experiments.