中频磁控反应溅射制备硅基氮化铝薄膜

Deposition of AlN Thin Films on Si(111) by Medium Frequency Magnetron Reaction Sputtering

利用中频磁控反应溅射技术,以高纯Al为靶材、高纯N2为反应气体,在Si(111)衬底上成功制备出氮化铝薄膜。通过X衍射分析和原子力显微镜测试发现:提高N2分压和升高衬底温度有利于AlN(110)的形成;随着衬底温度的改变,AlN薄膜的表面粗糙度也在变化,当衬底温度为230℃时,RMS表面粗糙度最小。实验结果表明:升高衬底温度有利于制备(110)面择优取向的AlN薄膜,退火是影响氮化铝薄膜表面粗糙度的重要因素。

AlN thin films were successfully deposited on Si(111)substrates by medium frequency magnetron reaction sputtering,which were in Ar and N2 mixtures with high pure Al target.It was analyzed by X-ray diffraction(XRD) that increasing substrate temperature and annealing temperature was of benefit to the(110) plane preferential orientation of AlN films.It was shown by atomic force microscopy(AFM) that altering substrate temperature enabled the surface roughness to be changed,and the optimal substrate temperature for the surface roughness of AlN films was 230℃.So,substrate temperature and annealing temperature are important to obtain high quality AlN thin films with smooth surface.