金属掺杂多孔硅薄膜的制备及荧光光谱研究

Study on fabrication and fluorescent property of metal-doped porous silicon

用电化学方法对多孔硅薄膜进行了金属掺杂.用荧光分光光度计分析了样品的光致发光特性,结果表明,适量的金属掺杂增强了多孔硅的红光发射,氧化性金属掺杂还增强了多孔硅的蓝光发射,还原性金属掺杂却无此现象.红外吸收谱表明,金属掺杂多孔硅后Si—O—Si键振动增强.XRD谱表明,氧化性金属掺杂后多孔硅的无定形程度增强.对分析结果的解释为:红光增强是金属掺杂引入新的缺陷和硅、氧、金属间新的键态Si—Metal,Metal—O,Metal—Metal所致,而蓝光增强是无定形程度增强,应力增大和进一步氧化所致.

Different metal ions are embedded into porous silicon films by electrochemical method. Fluorescence photo-spectrometer is used to investigate the photoluminescence properties of the samples. The red emission of porous silicon is enhanced after metal ions＇ doping. The blue emission of porous silicon is enhanced after the doping treatment by oxidative metal ions, however, the phenomenon can be negligible in the case of the doping by reductive metal ions. The FTIR results show that the Si-O-Si absorption peak is enhanced. The XRD shows that oxidative metal-doped porous silicon has a more disordered structure. The enhancement of red light emission is associated with the introduction of new defects and the formation of new Si-Metal, Metal-O, Metal-Metal bonds, the blue light emission enhancement is associated with the more disordered structure, higher strain in the films and also a higher level of oxidation.