有机硅化合物-金属氧化物绝缘保护材料在制造高压晶闸管中的应用研究

Fabrication of high voltage thyristor based on silicon organic compounds and metal oxides type isolation protective material

采用高纯有机硅化合物和金属氧化物,按比例均匀混合制成糊状材料,涂敷于器件台表面,用于半导体p-n结表面特性的控制和保护.固化后该材料在室温下的体电阻率大于7.5×1015Ω.cm,介电常数为4.7,击穿电压高于16kV/mm.该材料用于KP500型晶闸管表面保护,能明显改善器件的表面特性、减少漏电流和提高耐压水平,并对提高器件性能的机理进行了研究.

In this paper, we present some experimental results of the KP 500 thyristor which are fabricated by using silicon organic compounds and metal oxides type isolation material. Investigation on the principles of quality control of the semiconductor devices is also reported. The technique was based on coating the device surfaces with the mixture of high purity silicon organic compounds and metal oxides at a proper mixing ratio to protect the semiconductor p-n junction surface as well as to control the characteristic properties. At room temperature, the resistivity of the solid isolation protective material p 〉 7.5×10^15Ω·cm, its dielectric constant is equal to 4.7, and the breakdown voltage V 〉 16 kV/mm. We demonstrated the advantages of using this material on KP500 thyristor by significantly improving its surface properties, reducing the leakage current and increasing its voltage breakdown level.