低能Ar离子束辅助沉积Cu、Ag、Pt薄膜

Low energy ion beam assisted deposition of Cu,Ag and Pt thin films

采用低能Ar离子束辅助沉积方法,在Mo/Si(100)衬底上分别沉积Cu、Ag、Pt薄膜。实验发现,若辅助轰击的Ar离子束沿衬底法线方向入射,当离子/原子到达比为0.2时,沉积的Cu膜呈(111)晶向,而Ag、Pt膜均呈(111)和(100)混合晶向。当辅助轰击的Ar离子束偏离衬底法线方向45°入射时,沉积的Cu、Ag、Pt膜均呈(111)择优取向。采用Monte Carlo方法模拟能量为500eV的Ar离子入射单晶Ag所引起的原子级联碰撞过程,分别算得Ar离子入射单晶Ag(100)面、(111)面时,Ar离子的溅射率与入射角和方位角的关系。对离子注入的沟道效应和薄膜表面的自由能对薄膜择优取向的影响作了初步的探讨和分析。

Low energy ion beam assisted deposition （IBAD） was employed to prepare Cu, Ag or Pt films on Mo/Si（100） substrate. When the film deposition was performed with simultaneous bombardment of 500 eV Ar ion beam normal to the film surface at ion/atom arrival ratio of 0.2, the prepared Cu films were （111） preferred orientation, Ag and Pt films were （111） and （200） mixed orientations. When the Ar ion beam was off-normal direction of the film surface 45°, the prepared Cu, Ag and Pt films all exhibited highly preferred （111） orientation. Monte Carlo method was used to calculate the sputtering yields of Ar ions incident on single crystal Ag （100） and （111） plane at various incident angles and azimuth angles respectively. The effects of channeling effects and surface flee energy on the crystallographic texture of Cu, Ag and Pt films are discussed.