摘要
采用光学干涉测温原理测量微电子器件在线工作温度,设计了干涉测温系统,进行了实际测量实验,并与红外微像仪的测量结果进行了比较.
The drawbacks of conventional thermal measuring techniques are discussed
and thermometry based on the principle of optic interferometry is proposed for on line
measurement of the working temperature of the power semiconductor device. A practical system
has been designed and a comparison between the experimental results obtained by the method
developed and those with IR micro imager shows that the method of the authors has the
advantages of high resolution, non intrusiveness and a wide measuring range.
出处
《华中理工大学学报》
CSCD
北大核心
1997年第6期27-29,共3页
Journal of Huazhong University of Science and Technology
基金
国防预研基金