期刊文献+

30.4nm正入射成像系统滤光片 被引量:5

30.4 nm filter in normal incidence imager
下载PDF
导出
摘要 多层膜反射镜是30.4nm正入射望远镜的主要反射元件,但它在紫外、可见和近红外光波段也具有很高的反射率,需要滤光片来消除这些长波辐射,而滤光片材料和膜层厚度对滤光片的性能起重要作用。根据原子散射因子,理论计算出几种材料波长和线性吸收系数之间的关系,确认铝足30.4nm波段滤光片的最好材料。在考虑透过率和膜强度的基础上,确定了滤光片的膜层厚度。改进了现有的由Mcpherson247掠入射软X射线-真空紫外单色仪和气体空心阴极光源组成的光谱测量装置,使其适合于透过率的测昔,其波长扫描精度为±0.017~±0.097nm,对所制备的铝滤光片进行25.6~1000nm波段的透过率测量,测量结果显示其在30.4nm处的透过率为58.85%。为了比较全面地反映该种滤光片的透过率情况,又测量了它在紫外、可见和近红外波段的透过率,其值接近零,证明了该滤光片可满足30.4nm成像系统的需要。 The muhilayer mirrors are primary reflectors in a 30. 4 nm normal incidence telescope. Beacause of its very high reflectivity in ultraviolet, visible light and near infrared wave band, it is very necessary to use some special filters to remove these longer wave radiations. Moreover,material and thickness have great influence on the performance of filters. By computing the relationship between linear absorption coefficients and wavelengths for several kinds of materia factor,it can be proved that aluminum is the best material for 30.4 nm fi s based on atomic scattering ter. The filter's thickness is determined by considering the transmission and hardness. The spectrum measurement instrument made of Mcpherson model 247 grazing incidence monochromator and gas hollow cathode source is improved, which is fit for transmission measurement with the wavelength scanning error of ±0. 017-± 0. 097 nm. The transmission of prepared filter is measured from 25.6 nm to 1 000 nm,and the results show that it is 58.85% at 30.4 nm. The results also demonstrate that the filter can be used in a 30.4 nm imaging system, since it can prevent UV,visible and near infrared light effectively.
出处 《光学精密工程》 EI CAS CSCD 北大核心 2008年第1期42-47,共6页 Optics and Precision Engineering
基金 中国科学院创新基金资助项目 国家自然科学基金资助项目(No.60677043)
关键词 EUV滤光片 线性吸收系数 反射比 透过率 单色仪 EUV filter linear absorption coefficient reflectance transmission monochromator
  • 相关文献

参考文献10

  • 1SPILLER E,MCCORKLE R A,WILCZYNSKI J S,et al..Normal-incidence soft X-ray telescopes[J].Opt.Eng.,1991,30(8):1109-1115.
  • 2SCHULZE D W,SANDEL B R.Multilayer mirrors and filters for imaging the earth's inner magnetosphere[J].SPIE,1991,1549:319-328.
  • 3HARVEY J E,ZMEK W P,FTACLAS C.Imaging capabilities of normal-incidence X-ray telescopes[J].Opt.Eng.,1990,29(6):603-608.
  • 4KORTRIGH J B,UNDERWOOD J H.Design considerations for multilayer coated Schwarzschild objectives for the XUV[J].SPIE,1990,1343:95-103.
  • 5王丽辉,李敏,王孝坤,高亮,尼启良,陈波.用空心阴极光源标定极紫外-软X射线单色仪[J].光学技术,2007,33(3):370-372. 被引量:3
  • 6尼启良.纳秒激光等离子体光源的光谱测量技术[J].光学精密工程,2005,13(2):211-218. 被引量:8
  • 7齐立红,李忠芳,尼启良,陈波.水靶激光等离子体光源11~20nm波段光谱实验[J].光学精密工程,2005,13(3):272-275. 被引量:8
  • 8尼启良,齐立红,陈波.使用气体靶激光等离子体光源的软X射线反射率计[J].光学精密工程,2004,12(6):576-580. 被引量:8
  • 9SANSONETTI J E,MARTIN W C,YOUNG S L.Handbook of basic atomic spectroscopic data(version 1.1)[DB/OL].Gaithersburg:National Institute of Standards and Technology,2004[2004-10-08].http://phsics.nist.gov/Handbook
  • 10POWELL F R,DRAKE V A.Selection of materials for soft X-ray (SXR) and extreme ultraviolet (EUV) filters for space astronomy and other applications[J].SPIE,1994,2209:480-490.

二级参考文献36

  • 1尼启良,齐立红,陈波.使用气体靶激光等离子体光源的软X射线反射率计[J].光学精密工程,2004,12(6):576-580. 被引量:8
  • 2GULLIKSON E M, KORDE R, CANFIELD L R. Stable silicon photodiodes for absolute intensity measurements in the VUV and soft X-ray regions[J]. Journal of Electron Spectroscopy and Related Phenomena, 1996 , 80:313-316.
  • 3FUNSTEN H O, RITZAU S M, HARPER R W H. Response of 100% internal quantum efficiency silicon photodiodes to 200 eV to 40 keV electrons[J]. IEEE Transactions on Nuclear Science, 2001, 48(6):1785-1789.
  • 4KORDE R. One gigarad passivating nitrided oxides for 100% internal quantum efficiency silicon photodiodes[J]. IEEE Transactions on Nuclear Science, 1993, 40(6):1655-1659.
  • 5BAILEY S M, WOODS T N, CANFIELD L R, et al.Sounding rocket measurements of the solar soft X-ray irradiance[J]. Solar Physics. 1999, 186: 243-257.
  • 6CANFIELD L R, VEST R. Silicon photodiodes with integrated thin film filters for selective bandpasses in the extreme ultraviolet[J]. SPIE, 1994, 2282:1-38.
  • 7OGAWA H S, MCMULLIN D R, JUDGE D L. Normal incidence spectrometer using high density transmission grating technology and high efficiency silicon photodiodes for absolute solar EUV irradiance measurements[J]. Optical Engineering, 1993, 32(12): 3121-3125.
  • 8KORDE R,FURUNO K,HWANG H. Large area silicon detectors for calorimetry[C]. Proc. Symp. On Detector Research and Development for the Superconducting Super Collider. World Scientific, 1991,334-336.
  • 9JORQUERA C R, KORDE R, FORD V G. Design of new photodiode Standards for use in the MISR in-flight calibrator[J]. IEEE, 1994, 5(94):1998-2000.
  • 10CANFIELD L R, VEST R E. Absolute silicon photodiodes for 160 nm to 254 nm photons[J]. Metrologia, 1998, 35:329-334.

共引文献17

同被引文献34

  • 1张莉,吴永刚,曹鸿,徐垚,焦宏飞,陈玲燕.软X射线激光用自支撑Zr滤光膜的制备及测量[J].强激光与粒子束,2006,18(6):953-956. 被引量:3
  • 2王占山,马月英,张俊平,吕俊霞,李哲,曹健林.18.2nm正入射显微成像系统滤光片的研究[J].真空科学与技术,1997,17(1):12-18. 被引量:2
  • 3高凤菊,郑瑞廷,程国安.自支撑薄膜制备的研究进展[J].材料导报,2007,21(6):1-3. 被引量:9
  • 4EPE编辑部.EUV光刻技术的发展.EPE,2008,165:2-27.
  • 5G Derra, W Singer. Collection efficiency of EUV sources [ J ]. Proc. SPIE, 2003,5037 : 728 - 741.
  • 6R Mercier Ythier, X Bozec. EUV near normal incidence collector development at SAGEM [ J]. Proc. SPIE,2008, 6921 : 1 - 5.
  • 7Fabio E Zocchi, Enrico Buratti A. Design and optimization of collectors for extreme ultra-violet lithography [ J ]. Proc. SPIE,2006,6151:1 -6.
  • 8Fabio E Zocchi. High-efficiency collector design for extreme-tdtraviolet and x-ray applications [ J ]. Applied Optics,2006,45(35) :1 -6.
  • 9W N Partlo, J M Algots, G M Blumenstock, et al. Fomenkov,and X. Pan. collector for EUV light sources[ P]. U. S. Patent Appl. No. 2006/0131515.
  • 10W Singer,J Wangler. Collector for an illumination system with a wavelength of less than or equal to 193 nm[ P]. U. S. Patent Appl. No. 2003/0043455.

引证文献5

二级引证文献15

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部