InGaAs/InAlAs多量子阱电吸收光调制器

InGaAs/InAlAs Multiple Quantum Well Electro-absorption Modulator

在国内首次设计并制作了脊波导结构的In(0.53)Ga(0.47)As／In(0.52)Al(0.48)AS多量子阱电吸收型光调制器，并对它的工作特性进行了测试。在3.0V的驱动电压下实现了20dB以上的消光比，光3dB带宽达到了3GHz。对限制光调制器带宽的主要原因进行了分析，结果表明器件电容限制了带宽的提高，这主要是由于SiO2刻蚀液的钻蚀导致SiO2绝缘层厚度减小造成的。改进制作工艺可望大大改善调制器的工作带宽。

The first waveguide In(0. 53)Ga(0.47)As/In(0. 52)Al(0. 48)As multiple quantum well electro-absorption modulator in China is fabricated and characterized. An optical 3dB b8ndwidth of 3GHz is obtuined with a driving voltage of 3. 0V for an extinction ratio of more than 20dB at the wavelength of 1. 58μm. The bandwidth of the device is mainly limited by the capacitance of p contuct because the dielectric below is not thick enough due to the undercutting during the fabrication.