用于掺铒光纤放大器泵浦源的高性能980nm InGaAs应变量子阱激光器

High Performance 980nm Strained InGaAs Quantum Well Laser for Er-doped Fiber Amplifier

利用分子束外延（MBE）方法研制出了高质量的InGaAs／AlGaAs应变量子阱激光器外延材料，其最低的阈值电流密度可达到120A／cm2，激发波长在980nm左右。获得了高性能的适合于掺饵光纤放大器用的980nm量子阱激光器泵浦源，其典型的阈值电流为15mA，外微分量子效率的典型值和最好值分别为0．8mW／mA和1．0mW／mA，线性输出功率大于120mW，在20℃一50℃的特征温度T0为125K。器件在59℃，80mW下的恒功率老化实验表明具有较好的可靠性，与掺铒单模光纤耦合的组合件出纤功率可达63mW。

High quality InGaAs/AlGaAs strained quantum well epi-materials are achieved by molecular beam epitaxy. The lowest threshold current density is 120 A/cm2 and the emitting wavelength is at 980nm. High performance 980nm pump sources for Er-doped fiber amplifier are fabricated, which have the typical threshold current of 15mA, with the typical and best values of external quantum efficiency being 0. 8mW/mA and 1. 0mW/mA, respectively. The linear output power is more than 120mW. The h lifetests under the constant output power of 80mW at 50℃ demonstrate their good reliability. Coupling with Er-doped fiber, the output power reached 63mW.