摘要
我们在单晶MgO(100)、Si(100)和SiOx/Si基片上成功生长了纳米厚度的超薄NbN薄膜,利用现代分析手段:X射线衍射(XRD)、透射电子显微镜(TEM)、原子力显微镜(AFM)等技术分析研究了所制备的超薄NbN薄膜的微观结构、厚度、表面界面情况等物理特性。研究表明,在MgO(100)基片上获得了外延生长的单晶NbN超薄薄膜,在Si(100)和SiOx/Si基片上获得的是多晶NbN超薄薄膜。厚度均约6nm左右。这些超薄薄膜的超导转变温度分别为:MgO上薄膜是14.46K,Si和SiOx上薄膜分别是8.74K和9.01K.
We have fabricated successfully NbN nano- films on the monocrystalline MgO (100) ,Si (100) and SiOx/Si substrates. X -rays diffusion (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM) are used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the MgO (100) substrate, a polycrystalline structure on the Si (100) and SiOx/Si substrates. The films on the MgO ( 100), Si (100) and SiOx/Si substrates with a thickness of -6nm, show the superconducting transition temperature of 14.46K, 8.74K, and 9.01 K, respectively.
出处
《低温与超导》
CAS
CSCD
北大核心
2007年第6期498-500,508,共4页
Cryogenics and Superconductivity
基金
国家"973"
"863"计划项目(2006CB601006
2006AA22120)支持