ICP-AES测定三甲基铝中金属杂质的研究
被引量:1
摘要
MO(金属有机物)源是MOCVD技术的重要原料,对MO源中的金属杂质进行了分析研究。着重讨论了样品的制备、酸度对分析元素谱线强度的影响、基体铝对杂质元素谱线背景影响和光谱谱线干扰,以及基体铝对分析元素谱线强度的影响,做了回收实验,最后采用基体匹配法对三甲基铝中的金属杂质进行了测定。将不同实验室的分析数据进行对比,结果令人满意。
出处
《半导体技术》
CAS
CSCD
北大核心
1997年第4期53-55,共3页
Semiconductor Technology
同被引文献14
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