单晶Si上电沉积非晶态NiP薄膜的循环伏安研究

A CYCLIC VOLTAMMETRY STUDY OF NICKELPHOSPHOROUS AMORPHOUS ALLOY FILM ELECTRODEPOSITED ON SINGLE CRYSTAL SILICON

采用动电位沉积法在P型单晶硅（P－Si）上制备了NiP薄膜，利用循环伏安法对沉积和阳极溶出行为进行了研究．结果表明NiP合金中存在富镍和富磷的两种组分，具有不同的电化学活性；所获NiP合金的含P量为16．28Wt％，具有非晶态结构;在富P合金表面上进一步沉积时需要较高的过电位，说明P的加入不利于晶粒的继续长大而有利于非晶的形成．

Nickel-phosphorous alloy film on p-silicon was prepared by potential-controlled elec-trodeposition. Cyclic voltammetry was used to investigate the deposition and anodic strip-ping process. Results showed that in the deposit there exist two alloys with different com-position, nickel-rich and phosphorous-rich component parts, they have different structurestates and activity. Furture deposition of nickel-phosphorous on the two parts have differ-ent overpotentials values, the former is larger than the later. The above facts indicate thatphosphorous can inhibit the growth of the nuclei, therefore it is beneficial to the formationof amorphous deposits