期刊文献+

单晶生长炉全局热分析(1)--三维模型建立 被引量:3

GLOBAL ANALYSIS OF HEAT TRANSFER IN CZ SINGLE CRYSTAL GROWTH FURNACE (1):DEVELOPMENT OF UNSTEADY THREE-DIMENSIONAL MODEL
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摘要 晶体生长炉内高温热辐射和熔液对流十分复杂,使分析整个生长炉内传输现象的全局热分析模型一直停留在轴对称准静态假定上.本文考虑熔液对流的三维性和非定常性,构筑了三维全局热分析模型,讨论了熔液对流三维性和非定常性的影响。结果表明:本文模型预测的晶体成长界面反转临界雷诺数大大降低,更接近实际。 Thermal radiation and melt convection in CZ single crystal growth furnace are extremely complicated and make the model of global analysis of transport phenomena inside the whole growth furnace have been established on axisymmetrical and pseudo-steady assumptions. In this paper a threedimensional global analysis of heat transfer by considering unsteady three-dimensional melt flow was developed, and the effect of unsteady three-dimensional melt flow was discussed. The results indicate that the predicted critical rotation Reynolds number at which the crystal/melt interface reverses is greatly lowered down close to the practical.
出处 《工程热物理学报》 EI CAS CSCD 北大核心 2008年第2期306-308,共3页 Journal of Engineering Thermophysics
基金 国家自然科学基金项目(No.50576079)
关键词 全局热分析 熔体对流 内部热辐射 界面反转 global analysis of heat transfer melt convection internal radiation interface reversal.
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参考文献2

  • 1Kobayashi M, Hagino T, Tsukada T, et al. Effect of Internal Radiative Heat Transfer on Interface Inversion in Czochralski Crystal Growth of Oxides. J. Crystal Growth, 2002, 235:258-270.
  • 2Jing C J, Tsukada T, Hozawa M, et al. Numerical Stud- ies of Wave Pattern in an Oxide Melt in the Czochralski Crystal Growth. J. Crystal Growt, 2004, ~265: 505-517.

同被引文献31

  • 1高辉,敬成君,贾琛霞,塚田隆夫.单晶生长炉全局热分析(2)-非定常三维流动的影响[J].工程热物理学报,2008,29(8):1386-1388. 被引量:1
  • 2宇慧平,隋允康,张峰翊,常新安.勾形磁场下直径300mm CZ Si熔体中氧浓度分布的数值模拟[J].Journal of Semiconductors,2005,26(3):517-523. 被引量:5
  • 3邵淑芳,张庆礼,苏静,孙敦陆,王召兵,张霞,殷绍唐.提拉法晶体生长数值模拟研究进展[J].人工晶体学报,2005,34(4):687-692. 被引量:11
  • 4刘夷平,黄为民,王经.利用焓-多孔介质法对垂直Bridgman生长CdTe的数值模拟[J].材料研究学报,2006,20(3):225-230. 被引量:6
  • 5Kobayashi M, Hagino T, Tsukada T, et al. Effect of Internal Radiative Heat Transfer on Interface Inversion in Czochralski Crystal Growth of Oxides. J. Crystal Growth, 2002, 235:258 -270
  • 6郭宪良,孔祥谦,陈善年.计算传热学[M].合肥:中国科学技术出版社,1988.
  • 7Koichi Kakimoto, Akimasa Tashiro, Hideo Isshii, et al. Active Control of Melt Convection of Silicon by Electromagnetic Force under Cusp-shaped Magaaetic Fields[ J]. Materials Science in Semiconductor Processing,2003,5(4-5) :341-345.
  • 8闵乃本.晶体生长的物理基础[M].上海:上海科学技术出版社,1983.
  • 9Jana S, Dost S, Kumar V, et al. A numerical simulation study for the Czochralski growth process of Si under magnetic field [ J ]. International Journal of Engineering Science, 2006, 44(8) : 554-573.
  • 10Liu Lijun, Kakimoto Koichi. 3D global analysis of CZ- Si growth in a transverse magnetic field with various crystal growth rates [ J ]. Journal of Crystal Growth, 2005, 275(1) : e1521-e1526.

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