退火后无应变Ga_(1-x)In_xN_yAs_(1-y)/GaAs量子阱的带隙

Bandgap Energies in Strain-Free Ga_(1-x)In_xN_yAs_(1-y)/GaAs QWs After Annealing

针对快速热退火引起的N最近邻原子环境的变化,建立了热平衡态下Ga1-xInxNyAs1-y合金中各二元化合键的统计分布模型.并将理论计算得到的N周围平均In原子数r引入到BAC经验模型中,对退火后的Ga1-xInxNyAs1-y体材料带隙进行了计算.最后,利用讨论BAC模型中电子波函数边界条件的方法,计算了无应变Ga1-xInxNyAs1-y/GaAs量子阱的带隙.

According to the annealing-induced changes of an N-centered nearest-neighbor （NN） environment in Gaxln1-x NyAs1-y quaternary alloys,we present a statistical distributing model of the binary bonds in a thermodynamics equilibrium state. Then, the parameter r, the calculated number of NN In atoms per N atom, is introduced into the BAC empirical model. Finally, bandgap energies in strain-free Gal-x Inx NyAs1-y/GaAs QWs are calculated by discussing the boundary conditions for the electron wavefunction in the BAC model.