摘要
采用双沟道结构和GaAs衬底,成功设计研制了双沟道实空间电子转移晶体管.它具有RSTT典型的"Λ"形负阻I-V特性和较宽的平坦谷值区.通过栅压可改变各种负阻参数值,当栅压从0.6V增至1.0V时,PVCR的变化范围是2.1～10.6,峰值电流跨导约为3×10-4S.负阻参数VP,VV和开始产生负阻的栅极阈值电压都小于国际上同类器件的报道值,因此更适合低功耗的运用.
By adopting a dual channel structure and a GaAs substrate,a real space transfer transistor is successfully designed and fabri- cated. It has the standard “A” shaped negative resistance I-V characteristics as well as the level and smooth valley region of a conventional RSTT. The negative resistance parameters can be varied by changing the gate voltage. For example, the PVCR varies from 2. 1 to 10. 6V while Vos changes from 0.6 to 1.0V. The transconductance for Ip （AIp/A VGs） is 0.3mS. The parameters Vp and Vv ,and the threshold gate voltage for negative resistance characteristics are smaller than the values reported in the literatures. This device is suitable for low dissipation power application.
基金
国家重点基础研究发展规划资助项目(批准号:2002CB311905)~~
关键词
RSTT
高速化合物三端功能器件
三端负阻器件
热电子器件
电子转移器件
RSTT
high speed compound three terminal function device
three terminal negative resistance device
hot electron device
electron transfer device
