摘要
通过溅射的方法制作了Pt/AlGaN/GaN背对背肖特基二极管并测试了该器件对氢气的响应.研究了Pt/AlGaN/GaN背对背肖特基二极管在25和100℃时对于10%H2(N2气中)的响应,计算了器件的灵敏度;并比较了两种温度条件下器件对于氢气响应的快慢;空气中的氧气对于器件电流的恢复有重要的作用;最后由热电子发射公式计算了器件在通入10%的氢气前后有效势垒高度的变化.
Hydrogen sensors based on A1GaN/GaN back-to-back Schottky diodes have been produced. Platinum is sputtered on the surface of the sample. The response of the device to 10% H2 in N2 is measured at 25--100℃. The oxygen in the air has great influ- ence on the current of the device. Finally,the variation of the Schottky barrier height induced by the hydrogen is calculated.
基金
国家自然科学基金资助项目(批准号:60576046)~~
