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Cu-Ni/Solder/Ni-Cu互连结构的电迁移 被引量：4

Electromigration of Cu-Ni/Solder/Ni-Cu Structures
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摘要 采用Cu-Ni/Solder/Ni-Cu互连结构,在加载的电流密度为0.4×104A/cm2的条件下,得到了界面阴极处金属原子的电迁移.数值模拟揭示了其原因是由于凸点互连结构的特殊性,电子流在流经凸点时会发生流向改变进而形成电流聚集,此处的电流密度超过电迁移的门槛值,从而诱发电迁移.运用高对流系数的热传导方法降低了互连焊点的实际温度,在电迁移的扩展阶段显著减小了高温引起的原子热迁移对电迁移的干扰;因此电迁移力是原子迁移的主要驱动力.在电迁移的快速失效阶段,原子的迁移是热迁移和电迁移共同作用的结果:电迁移力驱动阴极处原子的迁移,造成局部区域的快速温升,从而加剧此处原子的热迁移. We investigated the electromigration mechanisms of Cu-Ni/solder/Ni-Cu structures. An electromigration process was ob- served when the applied average current density （0.4 × 10^4A/cm^2 ） was lower than the threshold value for electromigration （1.0 × 10^4A/cm^2）. This was attributed to the maximum current density （5. 83 × 10^4A/cm^2 ） being much higher than the threshold value at the cathode area due to effects of current crowding. Because forced-convection heat transfer was introduced, the atoms＇ thermal migration maximum was suppressed and did not disturb electromigration in the propagation stage. The electromigration force was dominant in this stage. In the quick-failure stage,atomic motion was driven by the cooperation of thermal migration and electromigration, which was generated by local temperature and the atoms thermal migration increasing rapidly and significantly.
作者 张金松 奚弘甲 吴懿平 吴丰顺
机构地区 武汉光电国家实验室
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第1期174-178,共5页 半导体学报（英文版）
基金 国家自然科学基金资助项目(批准号:60318002)~~
关键词 SnCu焊料 Ni-Cu层 电迁移 金属间化合物 SnCu solder Ni-Cu layer electromigration intermetallic compound
分类号 TN304 [电子电信—物理电子学]
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参考文献17

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同被引文献39

  • 1吴懿平,张金松,吴丰顺,安兵.SnAgCu凸点互连的电迁移[J].Journal of Semiconductors,2006,27(6):1136-1140. 被引量：8
  • 2Tu K N. Recent advances on electromigration in very-large-scale-integration of interconnects [J]. Journal of Applied Physics, 2003, 94 (9): 5451-5473.
  • 3Liang S W, Chen Chih, Han J K, Xu L H, Tu K N. Blocking hillock and whisker growth by intermetallic compound formation in Sn-0.7Cu flip chip solder joints under electromigration [J]. Journal of Applied Physics, 2010. 107(9): 093715.
  • 4Dalleau D, Weide-Zaage K. Three-dimensional voids simulation in chip metallization structures: a contribution to reliability evaluation [J]. Microelectronics Reliability, 2001, 41(9/10): 1625- 1630.
  • 5Liu Y, Liang L H, Irving S, Luk T. 3D Modeling of electromigration combined with thermal-mechanical effect for IC device and package [J]. Microelectronics Reliability, 2008, 48 (6): 811-824.
  • 6Tan C M, Hou Y J, Li W. Revisit to the finite element modeling of electromigration for narrow interconnects [J]. Journal of Applied Physics, 2007, 102(3): 127.
  • 7Liang L H, Zhang Y X, Liu Y. Prediction of electromigration failure of solder joints and its sensitivity analysis [J]. Journal of Electronic Packaging, 2011, 133(3): 031002.
  • 8Shi X Q, Wang Z P, Pang H L, Zhang X R. Effect of temperature and strain rate on mechanical properties of 63Sn/37Pb solder alloy [J]. Journal of Electronic Package, 1999, 121(3): 179- 185.
  • 9Gee S, Kelkar N, Huang J, Tu K N. Lead-free and PbSn bump electromigration testing [C]. Proceedings of InterPACK, 2005:1-6.
  • 10Chen C I, Lee C C, Ni C Y. Experimental and numerical investigations on solder reliability for flip-chip BGA packaging [C]. IEEE/SOLI2008, 2008: 2756-2762.

引证文献4

二级引证文献11

Journal of Semiconductors
2008年 第1期

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