摘要
采用直流磁控反应溅射技术成功制备了新型ZnO∶Mo(ZMO)透明导电薄膜。研究了钼掺杂量和基片温度等参数对ZMO薄膜结构和光电性能的影响。结果表明,薄膜的结构和光电性能与钼含量以及基片温度有关。X光衍射图谱(XRD)显示薄膜具有六角纤锌矿结构,并且在基片温度为200℃,钼含量(Mo/Zn+Mo)为1.5wt%时薄膜具有较好的c轴取向。制备出的ZMO薄膜最低电阻率为1.97×10-3Ω.cm,相应载流子迁移率达37.0 cm2V-1s-1,载流子浓度为8.57×1019cm-3,在可见光区域的平均透射率达到80%左右。
A novel transparent conductive thin film ZnO：Mo（ZMO） was prepared by DC reactive magnetron sputtering. The effect of Mo doping content and substrate temperature on the structural, electrical and optical properties of ZMO thin films was studied. The XRD pattern reveals that ZMO thin film is polycrystalline with the hexagonal structure and has a strongly preferred orientation of c axis at 200 ℃ substrate temperature and 1.5wt% Mo-doping. The films with minimum resistivity of 1.97×10^-3 Ω·cm was obtained. The highest carrier mobility is 37.0 cm^2V^-1s^-1, while the carrier concentration is 8.57 ×10^19 cm-3, and the average transmittance is about 80% in the visible light region.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2008年第1期1-5,共5页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金资助项目(No.60376010)
上海市应用材料研究和发展基金(No.07SA13)
上海市重点学科建设项目(No.B113)
