摘要
用高温固相反应法合成了微米级KTP晶体，用偏光显微镜对其形貌进行了表征，用XRD对烧成产品的物相进行了系统的分析，用最小二乘法对样品的晶胞参数进行了计算，系统分析了KTP晶体晶胞参数与合成温度的关系，在烧成温度为1000℃时，KTP的晶体为斜方晶系，晶胞参数为：αo=10.587（3）A，bo=12.814（3）A，Co=6.404（2）A，V=868.7（3）A^3。晶体的实测面网间距与计算值的标准偏差为0.00335，合成的KTP晶体的结晶程度较高。
The micro KTP crystal is synthesized by a high temperature solid state reaction. The characteristics of crystal′s morphology are exhibited by polarized light microscope and the phase of the sintering crystal is amply analyzed by XRD. The least-squares procedure is used to compute the cell parameters of the samples and analyze the relation of the cell parameters and the synthesized temperature. The KTP crystal is orthorhombic at 1000℃ whose cell parameters are αo=10.587（3）A,bo=12.814（3）A,Co=6.404（2）A and V=868.7（3）A^3. The standard deviation of distance of nets between acture measure and computational value is 0.00335. It is showed that the KTP is a good crystal.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2007年第F11期37-39,共3页
Materials Reports
基金
湖北省科技攻关重大项目资助(2002AA105A03)
