摘要
在恒定磁场的诱导下,恒电流电沉积制备了氧化亚铜(Cu_2O)晶体。X射线衍射(XRD)和X射线光电子能谱仪(XPS)的测定结果表明,电沉积制备的氧化亚铜(Cu_2O)为纯净、立方晶系的Cu_2O晶体;扫描电子显微镜(SEM)分析结果表明,有无磁场电沉积时,氧化亚铜均表现为多面体聚集,但电结晶行为表现不同,在磁诱导下Cu_2O电结晶径向生长的速率明显优于轴向生长,并出现孔洞现象。
Cuprous oxide (Cu2O)crystals are prepared by galvanostatic method in the constant intensity of magnetic field. Cu2O crystals are characterized by X-ray diffraction (XRD), X-ray photoelectron spectrum (XPS), and scanning electron microscope (SEM) . The results show that the samples are pure and cubic Cu2O crystals. With or without magnetic field, the Cu2O are both accumulated by polyhedrons , which mainly are octahedrons. However the behaviors of Cu2O electrocrystallization are greatly different. The radial growth velocity of Cu2O crystals is superior to that of axial growth, and the holes of accumulated Cu2O crystals are observed.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2007年第F11期43-44,60,共3页
Materials Reports
基金
总装预研项目(0404ZM0037)
关键词
氧化亚铜
电结晶
磁诱导
晶体生长
cuprous oxide, eleetrocrystallization, magnetic field inducing, crystal growth