射频磁控溅射制备Bi_2Te_3热电薄膜

Fabrication of Bi_2Te_3 Thermoelectric Films by RF Magnetron Sputtering

通过射频磁控溅射,在溅射气体为Ar,气压为1Pa,溅射功率为120W时分别在聚氨酯和玻璃基底上沉积了不同厚度的Bi_2Te_3薄膜。Bi_2Te_3薄膜主要是以(221)晶面平行于基底进行外延生长,先在基底形成大量微小晶粒,合并长大成典型的纤维状组织结构。在此条件下薄膜生长速率为26nm/min,通过控制溅射时间可沉积几纳来到几微米不同厚度的薄膜。得到的p-型半导体Bi_2Te_3薄膜,其电阻率随薄膜厚度的增大而减小。

The Bi2Te3 films with various thicknesses are fabricated on the bases of glass and polyurethane slices in the condition of 1Pa Ar pressure and 120W sputtering power. The structure of Bi2Te3 films is typically fibriform which Bi2Te3 films consist of micro-grains and united grains and the （221） crystal face of Bi2Te3 films is mainly parallel to the plane of floor. The growth rate of Bi2Te3 films is 26nm/min under this condition,and films with various thicknesses from several nanomoters to several microns could be acquired via altering sputtering time. The Bi2Te3 film is ptype semiconductor film,and the resistivity will decrease along with the thickness increasing of films.