摘要
室温条件下,在玻璃衬底上,采用直流磁控溅射法制备了ITO膜。研究了溅射压强,氧流量和溅射功率等工艺参数对薄膜光电性能的影响。结果表明:当Ar流量为44.2sccm和溅射时间20min等参数不变时,溅射气压0.7Pa,氧流量0.62sccm和溅射功率130W为最佳工艺条件。并得到了电阻率5.02×10-4Ω·cm,在可见光区平均透过率80%以上ITO薄膜。
The indium tin oxide （ITO） thin films were prepared on glass substrates by DC magnetron sputtering process at room temperature. The influences of sputtering pressure, sputtering power and oxygen flux on the electrical and optical properties of as-deposited ITO thin films were investigated. The experimental results showed that when the sputtering pressure is about 0.7Pa, oxygen flux about 0.62 cm^3 ·min^-1 and sputtering power 130W, the deposition parameters are optimal if Ar flux= 44.2 cm^3·min^-1 and sputtering time is 20min and both keep constant. The thin films thus prepared have a resistivity 5.02×10^-4Ω·cm and a transmissivity over 80% in visible light region.
出处
《真空》
CAS
北大核心
2008年第1期68-70,共3页
Vacuum
关键词
室温
ITO膜
直流磁控溅射
电阻率
透光率
room temperature
ITO film
DC magnetron sputtering
resistivity
transmissivity
