IGBT的总剂量辐射效应及加固

The Effects of Total Dose Radiation and Development of Radiation-Hard IGBT

本文研究一种“反程序”辐射加固工艺，将所有的高温处理过程放在栅氧化之前，并使栅氧化后续工艺低温化，在此基础上，采用“反程序”辐射加固工艺研制出的IGBT加固器件，其抗总剂量辐射性能远远优于采用常规工艺制造出的IGBT器件。对于栅氧化层厚度为70nm的加固器件，在VGS=十10V（直流和脉冲）、VGS=OV等不同栅偏量下，辐射剂量达到IX10^3（Gy（St))时，阈值电压的漂移量小于一1．OV，跨导变化小于10％。采用此工艺，预计抗总剂量辐射能力可达到10~4Gy（Si）以上。

A novel total-dose radiation-hard silicon process named 'reverse sequence' has been developed in this paper. The essential feature of this process is that the high temperature heat treatments, drive-ins and anneals are competed before gate oxidation, and the subsequent process steps do not exceed the gate oxidation growth temperature. Using the a 'reverse seguence' IGBT radtation-hard process, it has been manufactued the radtation-hard IGBT devices which has much better performance than those manufactured by applying the regutar IGBT radtation-hard process. The experemental results shows that during gamma irradiation with a total dose 1X103 Gy(Si), under the conditions that the drain-source were biased with+10V and the gate-source with+10V DC, -10V DC and OV, respectively, the threshold voltage shift of the radtation hard IGBT sample, with the gate oxidation thickness 70nm, is less than 1. 0V, and the degradation of transconductance, changed in gm, is less then 10%. It can be predicted that using the process, the radiationhard IGBT device which can endure the gamma irradiation with a total dose higher than 104 Gy(Si) can be manufactured.