用多晶硅吸杂和SiO_2背封工艺提高硅片质量

Improving Quality of Wafers by Technologies of Gettering and sealing the Rear Surface

我们对多晶硅吸荣和SiO_2背封二种工艺进行了系统的深入的实用性研究，解决了VLSI用外延片衬底的关键技术，提高了硅片质量并实现产业化。多晶硅每炉可生长约100mm（4英寸）硅片150～300片，SiO^2每炉生长100片。由于硅片质量好，工艺稳定，硅片已远销国外。

In order to improve the quality of si wafer for epitaxy, we investigate the technologies of gettering by depositing poly-silicon on the back of si wafer and sealing the rear surface by depositing SiO2. We successed to obtain high quality of si wafer for VLSI use.The throughput has been 150～300 wafers per run for polysilicon and 100 wafers per run for deposition of SiO2.