金属In与掺Nb的SrTiO_3金属半导体接触研究

The Metal-Semiconductor Junction of Indium and Nb Doped SrTiO_3

研究了金属In与掺不同Nb浓度的SrTiO3(Nb-STO)衬底之间构成的金属半导体结(金-半结)。测量了不同温度下的I-V曲线。在掺杂浓度为0.05wt.%衬底构成的金-半结I-V曲线中,反向电压部分得到的有效因子n在1.05～1.10之间,且随温度变化很小,而正向的n很大,表明出势垒随着偏压的变化改变很大。金属In与Nb-STO衬底之间构成的金-半结在浓度为0.05wt.%和0.7wt.%的掺杂情况下,结点都表现出非线性的I-V关系,均不能视为欧姆接触。

The metal-semiconductor junction of indium and Nb doped SrTiO3 were fabricated. The current-voltage of the junction were obtained by three terminals method, In the junction of 0.05 wt, % doped Nb-STO, the effect factor n derived from negative voltage are in range 1.05-1.10 and almost independent of temperature. The junctions both show non-linear I-V characteristic. The contact between Indium and Nb-STO could not be treated as Ohmic contact, even in high doped Nb-STO.