LaNi_5薄膜的制备及其充、放氢过程的电阻特性

Preparation of LaNi 5 Thin Film and Its Electrical Properties under A Hydrogen Atmosphere

ＬａＮｉ５薄膜的制备及其充、放氢过程的电阻特性朱开贵ａ）姚伟国ｂ）陈志祥ａ）张立德ａ）（ａ）中国科学院固体物理研究所，合肥２３００３１）（ｂ）苏州大学物理系，苏州２１５００６）ＬａＮｉ５作为稀土系储氢合金的代表，在储氢合金中研究得最为广泛，但是ＬａＮ...

LaNi 5 thin film was prepared by r.f. sputtering deposition method. Bulk LaNi 5 was used as the target. Electrical resistivity measurements of the film were carried out in a atmosphere of hydrogen. Resistivity of the film initially immediately and then gradually increased during the absorption process of hydrogen. The reverse is true for the desorption process.