离子束溅射技术制备 Ge-SiO_2 纳米颗粒镶嵌薄膜的微结构和光学性质研究

Microstrcture and Optical Properties of Ge SiO 2 Thin Films Prepared by The Ion Beam Sputtering

采用透射电子显微镜（ＴＥＭ）对ＧｅＳｉＯ２纳米颗粒镶嵌薄膜样品的形貌和结构进行了观察研究。测量了不同直径纳米锗颗粒镶嵌薄膜的吸收光谱，并在不同激发光能量下对样品进行了室温荧光光谱研究，发现在中心波长为４２０ｎｍ处有一个较强的光致荧光峰。研究结果表明纳米锗粒子的相结构和电子能级结构同常规的大块锗晶体相比均发生显著的改变。

Microstrcture and optical properties of Ge nanocrystallites embedded in SiO 2 thin films prepared by the ion beam sputtering technique have been studied. Effects of the quantum confinement and the dielectric confinement of the specimens on optical absoption spectra and the photoluminescence spectra have been discussed.