压应变In_(0.63)Ga_(0.37)As/InP单量子阱的变温光致发光研究

Temperature Dependent Photoluminescence Study of In_(0.63)Ga_(0.37)As/InP Compressively Strained Single Quantum Wells

我们对用GSMBE技术生长的In0.63Ga0.37AS／lnP压应变单量子阱样品进行了变温光致发光研究，In0.63Ga0.37As阱宽为1nm到11nm，温度变化范围为10K到300K．发现不同阱宽的压应变量子阱中激子跃迁能量随温度的变化关系与体In0.53Ga0.47As材料相似，温度系数与阱宽无关．对1nm的阱，我们观察到其光致发光谱峰为双峰，经分析表明，双峰结构由量子阱界面起伏一个分子单层所致．说明量子阱界面极为平整，样品具有较高的质量．考虑到组分效应、量子尺寸效应及应变效应，计算了In0.63G0.37As／InP压应变量子阱中的激子跃迁能量，理论计算结果与实验结果符合得很好．

We report on photoluminescence study of In0.63Ga0.37As/InP compressively strained single quantum wells (CSSQWs)with differing well widths measured over temperatures ranging from 10K to 300K. It is found that the temperature dependences of the exciton energies of CSSQWs are similar to that of bulk material and are independent of the quantum well width. Doublets are observed for the Inm well due to one monolayer fluctuation at the quantum well interface, showing that the sample has good quality. Considering the effects of alloy concentration,quantum size effect and coherent strain, the exciton transition energies are calculated. The calculated results are in good agreement with the experiment results.