摘要
利用改进的范德堡法微区薄层电阻测试探针技术对n-Si片上的硼扩散图形进行薄层电阻的测量，并用发度表示其分布，可得到薄层电阻的不均匀度及平均值．这种所谓Mapping技术更有利于评价材料质量．
The microarea probe technique of a modified Van der pauw method is used for measuring the sheet resistance for the boron-doped microareas on an n-type silicon wafer.Its distribution is shown with the grey scale. From it, the variation of sheet resistance and the average value on the wafer can be obtained. The mapping technique seems to be more suitable to assess the material quality.
基金
国家自然科学基金!69272001
天津市重大成果
