摘要
测量了Ｘ射线辐照对发光二极管正向电压和反向击穿电压的影响。分析了由Ｘ射线辐照引起ＬＥＤ伏安特性变化的机理。实验结果表明，一定剂量Ｘ射线辐照有助于改善器件电学特性。
A novel light source device for PIV is introduced.A set of optical tangent plane in parallel one another can be obtained instantly using this device.The device can also be used to analyze complex fluid field accurately and rapidly.
出处
《半导体光电》
CAS
CSCD
北大核心
1997年第4期266-270,共5页
Semiconductor Optoelectronics
