摘要
AgInSbTe/Si thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70hm in the AglnSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405 nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.
AgInSbTe/Si thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70hm in the AglnSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405 nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.
基金
Supported by the Shanghai Rising Star Programme （05QMX1476）, the National Natural Science Foundation of China under Grant Nos 50772120, 60507009 and 60490290, the Shanghai Key Basic Research Project （06DJ14007）, Chinese Academy of Sciences （KJCXZ.YW.NANO.06）, and the National Basic Research Programme of China （2007CB935400）.
