摘要
A boron nitride （BN）/silicon p-n heterojunction is fabricated by implanting beryllium （Be） ions into the BN films deposited by rf sputtering on n-type Si （111） substrates. The FTIR observations indicate that the films deposited have a mixed phase composition of 8p^2 - and sp^3 -hybridized BN. Considering the thickness of the BN layer, the ion implantation is conducted at an ion energy of 100keV with the dose of 5×10^15 cm^-2. After annealing at a high temperature, the surface resistance of the BN film decreases significantly by 6 orders down to 1.2×10^5Ω. Space-charge-limited current characteristic, which indicates the existence of shallow traps in the film, is observed. Current-voltage measurements across the BN film and the Si substrate reveal a clear rectification feature, demonstrating the achievement of p-type doping of BN films by Be ion implantation.
A boron nitride （BN）/silicon p-n heterojunction is fabricated by implanting beryllium （Be） ions into the BN films deposited by rf sputtering on n-type Si （111） substrates. The FTIR observations indicate that the films deposited have a mixed phase composition of 8p^2 - and sp^3 -hybridized BN. Considering the thickness of the BN layer, the ion implantation is conducted at an ion energy of 100keV with the dose of 5×10^15 cm^-2. After annealing at a high temperature, the surface resistance of the BN film decreases significantly by 6 orders down to 1.2×10^5Ω. Space-charge-limited current characteristic, which indicates the existence of shallow traps in the film, is observed. Current-voltage measurements across the BN film and the Si substrate reveal a clear rectification feature, demonstrating the achievement of p-type doping of BN films by Be ion implantation.
基金
Supported by the National Natural Science Foundation of China under Grant No 60376007, the Research Grants Council of the Hong Kong Special Administrative Region of China under Grant Nos CityU 122805 and CityU 123806, and Beijing Natural Science Foundation under Grant No 4072007.
