摘要
We propose the high speed signal wavelength conversion based on stimulated Raman effect on silicon waveguides. Simulation results of non-return-to-zero （NRZ） pseudorandom bit sequence （2^7-1 code） at 500-Gb/s rate of conversion in an ultrasmall silicon-on-insulator （SOI） optical waveguide are presented by co-propagating pump optical field. The most attractive issue is that the inverted converted signal can be obtained at the same wavelength as that of primary signal. In addition, the conversion performances, including extinction ratio （ER） and average peak power of conversion signal, depend strongly on the launching pump intensity.
We propose the high speed signal wavelength conversion based on stimulated Raman effect on silicon waveguides. Simulation results of non-return-to-zero （NRZ） pseudorandom bit sequence （2^7-1 code） at 500-Gb/s rate of conversion in an ultrasmall silicon-on-insulator （SOI） optical waveguide are presented by co-propagating pump optical field. The most attractive issue is that the inverted converted signal can be obtained at the same wavelength as that of primary signal. In addition, the conversion performances, including extinction ratio （ER） and average peak power of conversion signal, depend strongly on the launching pump intensity.
基金
Supported by the National Science Foundation of China under Grant No 60677023 and the National High technology Research and Development Program of China under Grant No 2006AA01Z240.
