Al在生长InGaN材料中的表面活化效应

Effect of Al Surfactant in the Growth of InGaN

为了解决材料的界面平整度,改善材料的晶体质量,在Ⅲ-Ⅴ族氮化物(InGaN)材料的生长过程中,加入了Al掺杂剂。实验发现,InGaN材料的双晶衍射半宽从533 arcsec(非掺Al)下降到399 arcsec(轻掺Al),PL光谱半宽变窄,从21.4 nm(非掺Al)降为20.9 nm(轻掺Al)。研究结果表明,Al作为活性剂明显提高了InGaN材料质量,这将对改善LED和LD多量子阱材料和器件质量带来积极影响,目前还没有相关的文献报道。

Al-doping was used in the growth of InGaN to improve its interface quality and the crystalline quality. The experimental results show that the full width at half maximum （FWHM） of XRD （002） is 399 arcsec for slight Al-doped InGaN, compared with the 533 arcsec undoped InGaN. The full width at half maximum （FWHM） of photol （PL） is 20.9 nm for slight Al-doped InGaN compared with the 21.4 nm undoped InGaN. As surfactant, Al enhances the InGaN quality greatly, which brings positive effect on the improvement of LED, LD multi quanta well and the device quality, there is no relevant reports on it.