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InP基谐振隧穿二极管的研究 被引量：1

Study of InP-Based Resonant Tunneling Diode
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摘要 谐振隧穿二极管(RTD)具有高频、低功耗、负阻、双稳态、自锁等优点,在超高速数字电路领域具有非常好的应用前景。加之InP材料固有的优越特性,使得InP基谐振隧穿器件成为目前研究的重点。研究并试制了InP基RTD实验样品,对其直流特性进行了测试分析,器件的最大电流峰谷比(PVCR)达到了17.8。 With high device frequency, low power dissipation, negative impedance, bistable and self- locking, resonant tunneling diode （RTD） has a promising application prospect in the ultra high speed digital circuits. Because of the inherent advantages InP-based resonant tunneling devices attract great attention in recent years. InP-based RTD was fabricated, its DC characteristics were investigated, and results show that the maximum peak-to-valley current ratio （PVCR） is 17.8 at room temperature.
作者 李亚丽 张雄文 冯震 周瑞 张志国
机构地区 中国电子科技集团公司第十三研究所
出处 《半导体技术》 CAS CSCD 北大核心 2008年第2期141-143,共3页 Semiconductor Technology
基金 国家自然科学基金(NSFC60606015) 上海市浦江人才计划项目(05PJ14068)
关键词 谐振隧穿二极管 电流峰谷比 铟磷基外延材料 resonant tunneling diodes peak-to-valley current ratio InP-based epitaxial material
分类号 TN312.2 [电子电信—物理电子学]
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参考文献10

  • 1SOLLNER T C L G, GOODHUE W D, TANNENWALD P E, et al. Resonant tunneling through quantum wells at frequency up to 2.5 THz[J]. Appl Phys Lett, 1983,43 (6) :588-590.
  • 2BROWN E R, SODESTROM J R, PARKER C D, et al. Oscillations up to 712 GHz in InAs/AlSb resonant tunneling diodes [J]. Appl Phys Lett, 1991,58(20) :2291.
  • 3SHIMIZU N, NAGATSUMA T, WAHO T, et al. In0.53Ga0.47As/ AlAs resonant tunneling diodes with switching time of 1.5 ps[J], Electronic Lett, 1995,31 (19) : 1695-1697.
  • 4MATSUZAKI H, ITOH T, YAMAMOTO M. A novel high-speed flip-flop circuit using RTDs and HEMTs [C]//Proc Ninth Great Lakes Syrup on VISI Society. Ypsilanfi, MI, USA, 1999 : 154-157.
  • 5MAEZAWA K, MATSUZAKI H, OSAKA J, et al. A large output voltage swing of resonant tunneling flip-flop circuit employinga monostable-bistable transition logic element (MOBILE) [ J], Jpn J Appl Phys, 1998,37 : L1286-L1287.
  • 6van der WAGT J P A, TANG H, BROEKAERT T P E, et al. Multibit resonant tunneling diode SRAM cell based on slewrateaddressing [J] .IEEE Prans on EDL,1998,46(1):55-62.
  • 7MATSUZAKI H, ARAI K, MAEZAWA K, et al. High-speed operation of static binary frequency divider using resonant tunneling diodes and HEMTs [J]. IEEE Electronics Lett, 1998,34( 1 ) : 70-71.
  • 8CHOI S, JEONG Y, YANG K. A Ku-band InP-based RTD MMIC VCO with very low DC power consumption[ C]///IEEE Int Conf on Indium Phosphide and Related Materials. USA, 2005 : 263-266.
  • 9CHOI S, JEONG Y, YANG K. Low DC-power Ku-band differential VCO based on an RTD/HBT MMIC technology [ J ]. IEEE Microwave and Wireless Components Lett, 2005,15 ( 11 ) : 742-744.
  • 10KOBAYSAI K W,OKI A K, TRAN L T,et al,A 108 GHz InPHBT monolithic push-push VCO with low phase noise and wide tuning band-width [J]. IEEE J of SSC, 1999,34(9) :1225-1232.

同被引文献16

  • 1张威虎,张富春,张志勇,薛苏琴,杨延宁.压力下纤锌矿ZnS电子结构的第一性原理研究[J].材料导报,2006,20(9):128-130. 被引量：10
  • 2阮驰,赵卫,陈国夫,朱少岚,杨宏春,阮成礼.GaAs与InP半导体光导开关特性实验研究[J].光子学报,2007,36(3):405-411. 被引量：12
  • 3贾伟,王进,韩培德,党随虎,迟美,刘旭光,许并社.AlN(10-10)表面结构的第一性原理计算[J].材料导报,2007,21(6):149-151. 被引量：1
  • 4Stampfl C, Van de Walle C G. Density-functional calculations for Ⅲ-Ⅴ nitrides using the local-density approximation and the generalized gradient approximation[J].Phys Rev B, 1999,59 (8) : 5521.
  • 5Ceperley D M, Alder B J. Ground state of the electron gas by a stochastic method[J]. Phys Rev Lett, 1980,45:566.
  • 6Hamann D R, Schluter M, Chiang C. Norm-conserving pseudopotentials[J]. Phys Rev Lett, 1979,43(20) : 1494.
  • 7Aspnes D E, Studna A A. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs and InSb from 1.5 to 6. 0 eV[J].Phys Rev B,1983,27(2) :985.
  • 8Talapin D V, Rogach A L, Borchert H, et al. Coloidal synthesis of mono disperse luminescent InP nanocrystats[C]// Stockholm: Proceedings of 14th Indium Phosphide and Related Materials Conference(IPRM, IEEE), 2002: 593.
  • 9Mikami O, Nakagome H. InGaAsP/InP optical waveguide switch operated by a carrier-induced change in the refractive index[J].Opt Quant Elec, 1985,17 : 449.
  • 10http://www, ioffe, ru/SVA/NSM/Semicond/index, html.

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半导体技术
2008年 第2期

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