摘要
采用直流磁控溅射方法成功地制备了Al膜,研究了退火温度对Al膜表面形貌、晶体结构、应力、择优取向及反射率的影响。研究表明:不同退火温度的薄膜晶粒排布致密而光滑,均方根粗糙度小。XRD测试表明:不同温度退火的铝膜均成多晶状态,晶体结构为面心立方,退火温度升高到400℃时,Al膜的应力最小达0.78 GPa,薄膜平均晶粒尺寸由18.3 nm增加到25.9 nm;随着退火温度的升高,(200)晶面择优取向特性变好。薄膜紫外-红外反射率随着退火温度的升高而增大。
Al films on quartz wafers were fabricated by DC magnetron sputtering. Surface roughness, crystal structure,stress stress, preferred orientation and reflectivity of Al films were studied by different annealing temperature. The AFM images show that the films are compact and smooth. The X-ray diffraction results indicate that the stress in the Al films was relaxed as annealing temperature increased from room temperature to 400℃, and the stress decreased from 1.56 GPa to 0.78 GPa. Microstructure analysis shows that the annealed Al films have the fcc structure, and the mean size of the nanoparticles has increased from 18.3 nm to 25.9 nm with increasing annealing temperature from room temperature to 400 ℃. As the annealing temperature rises, texture coefficient of （200） crystal face increases. Higher annealing temperature also causes higher ultraviolet-infrared reflectivity of the Al films.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2008年第1期155-158,共4页
High Power Laser and Particle Beams
基金
国家高技术发展计划项目
