K掺杂p型ZnO薄膜的制备及其表征

Preparation and characterization of K-doped p type ZnO films

以ⅠA族元素钾(K)作为掺杂剂,利用射频磁控溅射沉积技术,在单晶Si(111)衬底上成功生长了K:p-ZnO薄膜.采用Hall测试仪、X射线衍射、原子力显微镜和X射线光电谱等测试分析技术,对其结构和电学性能进行了研究.结果显示,该p-ZnO薄膜呈现良好的(002)单重择优生长特性,当衬底温度为500℃,氧分压为30%时表面粗糙度仅为89.05 nm,其相应的空穴浓度为5.45×1017/cm3,迁移率为1.96 cm2/(V.s),电阻率为5.91Ω.cm,具有较好的结晶质量和电性能.

Potassium（K）, one of I-group elements, is used as a dopant to prepare K： p-ZnO films deposited on single crystal Si （100） substrates by use of the radio frequency magnetron sputtering technique. The structures and electrical properties of the as-grown ZnO films are characterized by Hall, XRD, AFM and XPS measurements. The results indicate that the p-ZnO films show a typical preferred orientation of crystallites along with （002）. When the substrate temperature and oxygen partial pressure are kept at 500℃and 30%, respectively, the root mean square （rms） surface roughness of the p-ZnO thin films is 89. 05 nm approximately, and the hole concentration, mobility and resistivity are up to 5.45×10^17/cm^3 , 1.96 cm^2/（V · s）, and 5.91 12 Ω cm, respectively.