摘要
在不同条件下(不同助剂比例和不同研磨液浓度),通过对锗化学机械抛光速率变化的研究,探讨了锗片在SiO2胶体磨料与H2O2混合液加抛光助剂条件下的化学机械抛光过程,分析了助剂比例对抛光速率的影响。
The chemical mechanical polishing （CMP） rate variety of Germanium single crystal wafer is investigated under various conditions, including the additive ingredient and the slurry concentration. The CMP process of germanium wafers is discussed under the mixed solution of silica solution and peroxide with different additives. Finally, a conclusion is made that the ratio of the additive in the mixed solution affects the polishing rate. Using this method, the germanium polished wafer is successfully manufactured, which has a mirror surface suitable for the microelectronic industry.
出处
《中国电子科学研究院学报》
2008年第1期101-104,共4页
Journal of China Academy of Electronics and Information Technology
关键词
抛光
锗晶片
机理分析
polishing
germanium wafer
mechanism analysis
