摘要
为了有效降低工作于射频段的全集成CMOS负阻LC压控振荡器的相位噪声,介绍了利用电阻电容滤波技术对振荡器相位噪声的优化,并采用Chartered 0.35μm CMOS标准工艺设计了一款全集成CMOS负阻LC压控振荡器,其中心频率为2.4GHz,频率调谐范围达到300MHz,在3.3V电压下工作时,静态电流为12mA,在偏离中心频率600kHz处,仿真得到的相位噪声为-121dBc/Hz。该设计有效地验证了电阻电容滤波技术对相位噪声的优化效果,并为全集成低相位噪声CMOS负阻LC压控振荡器的设计提供了一种参考电路。
In order to reduce the phase noise of the full - integrated CMOS negative - resistance LC voltage - controlled oscillator which is used in RF band, the way to optimize the phase noise that making use of RC filtering technology was introduced, and one voltage - controlled oscillator was realized with Chartered 0.35μm CMOS standard technology. Its center frequeney is 2.4GHz, and its frequency range is 300MHz, the statie eurrent is 12mA at 3.3V, the phase noise at 600 kHz away from the eenter frequency is - 121dBe/Hz. The design effectively validated the RC filtering technology's funetion on optimizing phase noise, and gave one referenee design about the full -integrated CMOS negative- resistanee LC voltage - controlled oscillator of low phase noise.
出处
《计算机技术与发展》
2008年第2期170-172,共3页
Computer Technology and Development
基金
安徽省自然科学研究重点项目(2006kj012a)
安徽大学研究生创新项目(20073049)
关键词
CMOS
压控振荡器
相位噪声
频率范围
CMOS
voltage- controlled oscillator
phase noise
frequency range