氨化Ga_2O_3/Nb薄膜制备GaN纳米线

Synthesis of GaN nanowires through ammoniating Ga_2O_3/Nb thin films

采用射频磁控溅射技术先在硅衬底上制备Ga2O3/Nb薄膜,然后在900℃时于流动的氨气中进行氨化制备GaN纳米线。用X射线衍射（XRD）、傅立叶红外吸收光谱（FTIR）、扫描电子显微镜（SEM）、透射电子显微镜（TEM）详细分析了GaN纳米线的结构和形貌。结果表明：采用此方法得到的GaN纳米线为六方纤锌矿结构,其纳米线的直径大约在50-100nm之间,纳米线的长约几个微米。室温下以325nm波长的光激发样品表面,只显示出一个位于364.4nm的很强的紫外发光峰。最后,简单讨论了GaN纳米线的生长机制。

Nb and Ga2O3 films were sputtered in turn on Si（111） substrates using radio frequency sputtering system. Then Ga2O3/Nb films were ammoniated in tube furnace in the flowing NH3 ambience at 900℃. X-ray diffraction （XRD）, scanning electron microscopy （SEM）, transmission electron microscope （TEM）, Fourier transformed infrared spectrum （FTIR） are used to characterize the structural and morphological properties of the as-synthesized GaN nanowires. The results reveal that the nanowires are pure hexagonal GaN wurtzite structure with a length of about several microns and a diameter of about between 50 and 100nm. Finally, the formation mechanism of gallium nitride nanowires is discussed briefly.