C镶嵌SiO2薄膜电致发光谱的数值分析

Numerical study of electroluminescence from C embedded SiO_2 films

采用磁控溅射法制备了含纳米碳粒的氧化硅薄膜,在室温下测量了Au/镶嵌纳米碳粒氧化硅膜/p-Si结构的电致发光谱,电致发光谱显示,随着正向偏压的增加,来自该结构的电致发光峰位于650nm处几乎不移动,发光强度增大。利用位形坐标模型对C镶嵌SiO2薄膜的电致发光谱进行了分析,结果表明该结构的电致发光谱存在1.8和2.0eV左右的两个发光中心,分别来自SiO2层的非桥氧空位和纳米C团簇。

C embedded SiO2 films are deposited by the r. f. magnetron sputtering technique. The electroluminescence spectra from Au/C embedded SiO2 films/p-Si are measured at room temperature. EL band peak locates at around 650nm, and has no evident shift with increasing forward bias. The light centers of this structure are analyzed by using configuration coordinate. The results show that the luminescence centers of the spectra locate at about 1.8 and 2. 0eV, which originate from non-bridge oxygen vacancy of SiO2 layers and nano-C clusters respectively.