GeSi/Si多量子阱红外探测器波导结构的理论计算

CALCULATION OF Ge_xSi_(1-x)/Si MQW PHOTODETECTOR WAVEGUIDE STRUCTURE

本文采用传输矩阵的方法计算了GexSi1－x／Si量子阱红外探测器结构参量对多量子阱波导结构模场分布，光场限制因子和有效吸收系数的影响，并给出了优化设计的结果．

Calculations of optical waveguide dispersion are performed to determine the dependence of electric-magnetic field distribution,optical confinement factor and effective absorption coefficient on the waveguide structure of GexSi1-x/SiMQW waveguidephotodetectors. Theoptimumresults aregiven,which can be used for the design of the GexS1-x/Si MQW waveguide photodetectors.