抛物量子点中弱耦合激子的光学声子平均数(英文)

Mean Number of Optical Phonons of Weak-coupling Exciton in Parabolic Quantum Dot

研究了电子-体纵光学声子弱耦合情况下,抛物量子点中激子的性质。在有效质量近似下,采用线性组合算符和幺正变换方法研究了抛物量子点中弱耦合激子的基态能量和光学声子平均数。以GaAs半导体为例进行了数值计算,结果表明:弱耦合情况下,激子的光学声子平均数基态的能量和量子点受限强度的增大而减小,随量子点半径的增大而增大。

On the condition of electron-LO phonons weak coupling, the properties of exciton in parabolic quantum dot are studied. By using the linear combination operator and unitary transformation method, the ground state energy and the mean number of optical phonons in a parabolic quantum dot are calculated for the weak coupling exciton case. Numerical calculations are performed for GaAs semiconductor as a example and the results show that the mean number of optical phonons of weak-coupling exciton decrease with the increasing of the ground state energy and the confinement strength of quantum dot and increase with the increasing of the quantum dot radius. The ground state energy decrease with the increasing mean number of optical phonons and the coupling strength.